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1010 µ¥ÀÌÅÍ Ã¤³Î, 522 Çϵå¿þ¾î µ¥ÀÌÅÍ Ã¤³Î (½Ç½Ã°£ µ¥ÀÌÅÍ ºÐ¼®)

¿Âµµ Á¶Àý

-5 ¡Æ C to 110 ¡Æ C, ¡¾ 0.1 ¡Æ C

ÀÀ°á Á¶Àý

°ÇÁ¶ °ø±â (¿É¼Ç: Áú¼Ò °¡½º)

·¹ÀÌÀú

40 mW 640 nm temperature-controlled red semiconductor laser. (¿É¼Ç: 40 mW, 514 nm)

ÃøÁ¤ °¢µµ

90¡Æ, 173¡Æ & 15¡Æ

¼ÒÇÁÆ®¿þ¾î

ÃøÁ¤ ¹× ºÐ¼®, ¹Ì¼¼À¯º¯ÇÐ, ´Ü¹éÁúºÐ¼®

o    Average & width

o    lognormal fit & multimodal size distribution for sizing

o    Doppler Frequency Shift

o    Electrophoretic mobility

o    Zeta potential using Smoluchowski, Hückel, or Henry

Å©±â ÃøÁ¤

Å©±â ÃøÁ¤¹üÀ§

0.3nm ~ 10µm (½Ã·á¿¡ µû¶ó º¯°æ)

³óµµ ¹üÀ§

0.1 ppm to 50 mg/mL

ÃÖ´ë½Ã·á Àüµµµµ

¹«Á¦ÇÑ

½Ã·á ¼¿

1 to 3 mL ÀÏȸ¿ë Æú¸®½ºÆ¿·», 50 µL ÀÏȸ¿ë Æú¸®½ºÆ¿·», 40 µL ¼®¿µ À¯µ¿¼¿, 10 µL ¼®¿µ ¼¿

½ÅÈ£ ó¸®

Dynamic Light Scattering, DLS

Á¤È®µµ

¡¾ 1% typical

Á¦Å¸ ÀüÀ§ ÃøÁ¤

Á¦Å¸ÀüÀ§ ÃøÁ¤ ¹üÀ§

-500 mV to 500 mV, sample dependent

³óµµ ¹üÀ§

40% v/v, sample dependent

À̵¿µµ ¹üÀ§

10-11 to 10-7 m2 /V*s

ÃÖ´ë½Ã·á Àüµµµµ

220 mS/cm

½Ã·á ¼¿

175 µL, 450 µL, 1250 µL

½ÅÈ£ ó¸®

Àü±â¿µµ¿±¤»ê¶õ(ELS), À§»óºÐ¼®±¤»ê¶õ(PALS)

Á¤È®µµ

¡¾ 3% typical

Àü±Ø ¼ÒÀç

Pd

Àü±Ø °£ °Å¸®

3.6 mm

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ºÐÀÚ·® ÃøÁ¤¹üÀ§

~980 Da to 20 MDa, (½Ã·á¿¡ µû¶ó º¯°æ)


 

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ÄÄÇöóÀ̾ð½º

ISO13321, ISO22412

Àü·Â·®

100/115/220/240 VAC, 50/60 Hz, 150 Watts

Å©±â

23.3 x 42.7 x 48.1 cm (HWD)

¹«°Ô

15 kg

»ç¿ë ȯ°æ

Temperature 10 ¡Æ C to 75 ¡Æ C

Humidity 0% to 95%, non-condensing

CE ÀÎÁõ

Class I laser product, EN 60825-1:2001, CDR

NanoBrook

90Plus

ZetaPlus

Zeta PALS

90Plus Zeta

90Plus PALS

173

173Plus

Omni

´Ü¹éÁú Å©±â

X

X

X

Backscatter

X

X

X

IgG/mAb

X

X

X

Á¦¾à ¹× ¿ø·áÀǾàÇ°

X

X

X

X

X

X

´Ü¹éÁú °áÁ¤È­

X

X

X

´Ü¹éÁú ÀüÀ§

X

X

´Ü¹éÁú ¿ëÇØÁ¡t

X

X

X

¿ÂµµÁ¶Àý ±â´É

X

X

X

X

X

X

´Ü¹éÁú ¾ÈÁ¤µµ

X

X

X

X

ÀÔµµ Å©±â

X

X

X

X

X

X

ÀÔµµ ºÐ»ê

X

X

X

X

X

X

³ª³ë ÀÔÀÚ Å©±â

X

X

X

X

X

X

X

X

Micelles, Microemulsions

X

X

X

X

X

X

Á¦Å¸ ÀüÀ§

X

X

X

X

X

Á¦Å¸ ÀüÀ§

(°í¿°µµ ¹× À¯±â¿ëÁ¦)

X

X

X

X

PALS

X

X

X

ºÐÀÚ·®

X

X

X

X

X

¼öó¸® ÀÀ¿ëºÐ¾ß

X

X

X